| PART |
Description |
Maker |
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC3665 |
NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1B01FU E001968 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1B01F E001967 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| HN2C01FU E001987 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC4944 2SC494407 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
Toshiba Semiconductor
|
| HN1B01F07 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC473807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4207 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
